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BAS16GW
BAS16GW
主要参数

High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

特性

  • High switching speed: trr ≤ 4 ns

  • Low leakage current

  • Repetitive peak reverse voltage VRRM≤ 100V

  • Low capacitance

  • Small SMD plastic package

  • High-temperature applications up to 175 °C

  • AEC-Q101 qualified


目标应用

  • High-speed switching at high voltage

  • General-purpose switching


参数类型

型号Package versionPackage nameSize (mm)VR [max] (V)IFSM [max] (A)VF [max] (mV)IR [max] (nA)IFRM (mA)Configurationtrr [max] (ns)IF [max] (mA)Cd [max] (pF)Automotive qualified
BAS16GWSOD123SOD1232.675 x 1.6 x 1.1510041250@IF=150mA500@VR=80V500single42151.5Y