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BAS16-Q
BAS16-Q
主要参数

High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package.

特性

  • High switching speed: trr ≤ 4 ns

  • Low capacitance

  • Low leakage current

  • Reverse voltage: VR ≤ 100 V

  • Repetitive peak reverse voltage: VRRM ≤ 100 V

  • Qualified according to AEC-Q101 and recommended for use in automotive applications


目标应用

  • High-speed switching

  • General-purpose switching


参数类型

型号Package versionPackage nameSize (mm)VR [max] (V)IFSM [max] (A)VF [max] (mV)IR [max] (nA)IFRM (mA)Configurationtrr [max] (ns)IF [max] (mA)Cd [max] (pF)Automotive qualified
BAS16-QSOT23SOT232.9 x 1.3 x 110041000@IF=50mA500@VR=80V500single42151.5Y