您好,欢迎光临 深圳市恒屯兴科技有限公司!
主营MCU、IC二三极管、场效应管等

主营品牌

您所在的位置:首页>>主营品牌>>NXP
BAS116GW
BAS116GW
主要参数

Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

特性

  • High switching speed: trr = 0.8 µs

  • Low leakage current: IR = 3 pA

  • Repetitive peak reverse voltage VRRM≤ 85V

  • Low capacitance: Cd= 2 pF

  • Small SMD plastic package

  • AEC-Q101 qualified


目标应用

  • Low-leakage current applications

  • General-purpose switching


参数类型

型号Package versionPackage nameSize (mm)VR [max] (V)IFSM [max] (A)VF [max] (mV)IR [max] (nA)IFRM (mA)Configurationtrr [max] (ns)
trr [max]
IF [max] (mA)Cd [max] (pF)
BAS116GWSOD123SOD1232.675 x 1.6 x 1.157541250@IF=150mA5@VR=75V500single30002152